| 发明名称 |
SEMICONDUCTOR DEVICE HAVING BURIED REGION AND METHOD OF FABRICATING SAME |
| 摘要 |
A semiconductor device includes a substrate having a first conductivity type, a high-voltage well having a second conductivity type and formed in the substrate, a drift region formed in the high-voltage well, a drain region formed in the high-voltage well and spaced apart from the drift region, and a buried region having the first conductivity type formed in the high-voltage well between the drift region and the drain region. |
| 申请公布号 |
US2016300903(A1) |
申请公布日期 |
2016.10.13 |
| 申请号 |
US201514683710 |
申请日期 |
2015.04.10 |
| 申请人 |
Macronix International Co., Ltd. |
发明人 |
CHIEN Yu-Chin;CHAN Ching-Lin |
| 分类号 |
H01L29/06;H01L29/739;H01L21/265;H01L29/66;H01L29/10;H01L29/78;H01L29/861 |
主分类号 |
H01L29/06 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A semiconductor device, comprising:
a substrate having a first conductivity type; a high-voltage well having a second conductivity type and formed in the substrate; a drift region formed in the high-voltage well; a drain region formed in the high-voltage well and spaced apart from the drift region; and a buried region having the first conductivity type formed in the high-voltage well between the drift region and the drain region, wherein an upper-side edge of the buried region is deeper than a bottom of the drift region. |
| 地址 |
Hsinchu TW |
