发明名称 POSITIVE RESIST COMPOSITION AND PATTERN FORMING METHOD
摘要 PROBLEM TO BE SOLVED: To provide a positive resist composition capable of giving high resolution and a good pattern profile, and a pattern forming method using the positive resist composition in liquid immersion lithography including formation of a protective film.SOLUTION: The positive resist composition comprises: (A) a resin that includes a methacrylic acid as a repeating unit which has a specific 2-alkyladamantyl group and a specific 2-alkylcyclopentyl group in a side chain as acid-labile groups, and that shows increase in the alkali solubility by an acid; (B) a sulfonium salt represented by formula (3) and formula (4); and (C) a solvent.SELECTED DRAWING: None
申请公布号 JP2016212213(A) 申请公布日期 2016.12.15
申请号 JP20150094749 申请日期 2015.05.07
申请人 SHIN ETSU CHEM CO LTD 发明人 FUNATSU AKIYUKI;SEKI AKIHIRO
分类号 G03F7/039;C08F220/28;G03F7/004;G03F7/20;G03F7/32;G03F7/38 主分类号 G03F7/039
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