发明名称 |
POSITIVE RESIST COMPOSITION AND PATTERN FORMING METHOD |
摘要 |
PROBLEM TO BE SOLVED: To provide a positive resist composition capable of giving high resolution and a good pattern profile, and a pattern forming method using the positive resist composition in liquid immersion lithography including formation of a protective film.SOLUTION: The positive resist composition comprises: (A) a resin that includes a methacrylic acid as a repeating unit which has a specific 2-alkyladamantyl group and a specific 2-alkylcyclopentyl group in a side chain as acid-labile groups, and that shows increase in the alkali solubility by an acid; (B) a sulfonium salt represented by formula (3) and formula (4); and (C) a solvent.SELECTED DRAWING: None |
申请公布号 |
JP2016212213(A) |
申请公布日期 |
2016.12.15 |
申请号 |
JP20150094749 |
申请日期 |
2015.05.07 |
申请人 |
SHIN ETSU CHEM CO LTD |
发明人 |
FUNATSU AKIYUKI;SEKI AKIHIRO |
分类号 |
G03F7/039;C08F220/28;G03F7/004;G03F7/20;G03F7/32;G03F7/38 |
主分类号 |
G03F7/039 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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