| 摘要 |
PROBLEM TO BE SOLVED: To provide an epitaxial growth method of a compound semiconductor which is capable of epitaxially growing a compound semiconductor without being influenced by a p-type dopant material used for growing a p-type compound semiconductor layer, even if an epitaxial layer is not grown for removing a p-type dopant such as a residual zinc. SOLUTION: A plurality of compound semiconductor layers 6 are grown in multiple layers on a substrate 1 using a first reaction furnace A wherein the p-type dopant material is not supplied. Then, a p-type compound semiconductor layer 5 added with a p-type dopant such as zinc is grown on the stacked compound semiconductor layers 6 using a second reaction furnace B. COPYRIGHT: (C)2007,JPO&INPIT
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