发明名称 |
Semiconductor light emitting element |
摘要 |
According to one embodiment, a semiconductor light emitting element includes a semiconductor layer, a first conductive layer, and a second conductive layer. The second conductive layer is provided between the semiconductor layer and the first conductive layer. A light transmittance of the second conductive layer is higher than a light transmittance of the first conductive layer. An extinction coefficient of the second conductive layer is 0.005 or less. |
申请公布号 |
US9299903(B1) |
申请公布日期 |
2016.03.29 |
申请号 |
US201514642477 |
申请日期 |
2015.03.09 |
申请人 |
Kabushiki Kaisha Toshiba |
发明人 |
Mitsugi Satoshi;Ito Toshihide |
分类号 |
H01L51/44;H01L33/62;H01L33/00;H01L33/06;H01L33/32;H01L33/22 |
主分类号 |
H01L51/44 |
代理机构 |
White & Case LLP |
代理人 |
White & Case LLP |
主权项 |
1. A semiconductor light emitting element, comprising:
a semiconductor layer; a first conductive layer; and a second conductive layer provided between the semiconductor layer and the first conductive layer, a light transmittance of the second conductive layer being higher than a light transmittance of the first conductive layer, an extinction coefficient of the second conductive layer being 0.005 or less. |
地址 |
Tokyo JP |