发明名称 CRUCIBLE AND METHOD FOR GROWING SINGLE CRYSTAL USING THE SAME
摘要 PROBLEM TO BE SOLVED: To provide a crucible with which the bottom part of a seed crystal can be sufficiently cooled when a raw material is melted; and to provide a method for growing a single crystal using the same. SOLUTION: The crucible 1 is used for growing the single crystal along the crystal plane of the seed crystal of an optical component material by melting the optical component material and cooling, and has a raw material accommodating part for accommodating the optical component material as the raw material and a seed crystal S accommodating part 1E for accommodating the seed crystal. The bottom part of the seed crystal accommodating part 1E has a shape consistent with that of the end part of the seed crystal S. Thereby, a gap between the bottom surface 1N of the seed crystal accommodating part 1E and the end face S1 of the seed crystal S is made sufficiently small and the bottom part of the seed crystal S can be sufficiently cooled when melting the raw material while cooling the bottom part of the seed crystal S through the crucible 1. COPYRIGHT: (C)2005,JPO&NCIPI
申请公布号 JP2005047781(A) 申请公布日期 2005.02.24
申请号 JP20030284047 申请日期 2003.07.31
申请人 HITACHI CHEM CO LTD 发明人 SUMIYA KEIJI;NACHIMUSU SENGUTTOBAN;ISHIBASHI HIROYUKI
分类号 C30B29/12;(IPC1-7):C30B29/12 主分类号 C30B29/12
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