| 发明名称 |
COMPOSITION FOR FORMING A SILICA BASED LAYER, METHOD FOR MANUFACTURING SILICA BASED LAYER, AND ELECTRONIC DEVICE INCLUDING THE SILICA BASED LAYER |
| 摘要 |
A composition for forming a silica based layer includes a silicon-containing compound including polysilazane, polysiloxazane, or a combination thereof and one or more kinds of solvent, and having a turbidity increasing rate of less than or equal to about 0.13. |
| 申请公布号 |
US2016177133(A1) |
申请公布日期 |
2016.06.23 |
| 申请号 |
US201514842632 |
申请日期 |
2015.09.01 |
| 申请人 |
SAMSUNG SDI CO., LTD. |
发明人 |
Lim Wan-Hee;Kwak Taek-Soo;Lee Han-Song;Park Eun-Su;Kang Sun-Hae;Kim Bo-Sun;Kim Sang-Kyun;Park Sae-Mi;Bae Jin-Hee;Seo Jin-Woo;Jang Jun-Young;Cho Youn-Jin;Han Kwen-Woo;Hwang Byeong-Gyu |
| 分类号 |
C09D183/14;B05D1/00;C08K5/01 |
主分类号 |
C09D183/14 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A composition for forming a silica based layer,
comprising a silicon-containing compound comprising polysilazane, polysiloxazane, or a combination thereof and one or more kinds of solvent, and having a turbidity increasing rate of less than or equal to about 0.13, wherein the turbidity increasing rate is defined by Relationship Equation 1, and a gelation time in the Relationship Equation 1 is measured at temperature of about 23° C.±about 2° C. under a relative humidity of about 50%±about 10%:
Turbidity increasing rate (NTU/hr)=(Turbidity at gelation−Initial turbidity)/Gelation time. Relationship Equation 1 |
| 地址 |
Yongin-si KR |
