DISHING REDUCING IN TUNGSTEN CHEMICAL MECHANICAL POLISHING

摘要

PROBLEM TO BE SOLVED: To provide slurries, methods and systems that can be used in chemical mechanical planarization (CMP) of a tungsten containing semiconductor device.SOLUTION: Additives are used to reduce the dishing on large and small feature sizes (large bond pad and fine line structures) without reducing a tungsten removal rate.SELECTED DRAWING: Figure 1