| 摘要 |
PROBLEM TO BE SOLVED: To provide a method of manufacturing a ferroelectric memory capable of preventing the characteristic of a ferroelectric layer from being deteriorated. SOLUTION: The method of manufacturing the ferroelectric memory 120 comprises the steps of: forming a ferroelectric capacitor 80 by sequentially laminating, from the side of a substrate 10, a lower electrode 82, a ferroelectric layer 84, and an upper electrode 86; forming a first insulating layer 100 to cover the ferroelectric capacitor; forming a contact hole in the first insulating layer to expose the upper electrode; heating it to 350°C or higher; and forming a conductive layer in the contact hole. COPYRIGHT: (C)2008,JPO&INPIT
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