| 摘要 |
A flash memory device compensating its read voltage margin and method for adjusting read voltage thereof is provided to compensate for the influence of the page high temperature stress and word line by controlling the read voltage. A cell array is classified into a respective main area(210), a spare area(220) and an index area(230). Each domain frame is divided based on the column address. The control information of the bad block information(Bad Block Data) or the error correction information is stored at the spare area. The index area comprises a memory cells for sensing the extent of the charge leakage according to the high temperature stress. The page buffer(240) is the action mode, and it is operated as the sense amplifier or the write driver. The reading voltage control(250) sets up the optimum read voltage of the word line included in the cell array or the memory cells corresponding to the page unit.
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