| 发明名称 |
PASSIVATION FOR SEMICONDUCTOR LIGHT EMITTING DEVICE |
| 摘要 |
PROBLEM TO BE SOLVED: To provide a passivation layer for a semiconductor light emitting device.SOLUTION: A passivation layer is disposed over a side of a semiconductor structure including a light emitting layer disposed between an n-type region and a p-type region. Material configured as adhesion to an underfill is disposed over an etched surface of the semiconductor structure.SELECTED DRAWING: Figure 1 |
| 申请公布号 |
JP2016174179(A) |
申请公布日期 |
2016.09.29 |
| 申请号 |
JP20160110800 |
申请日期 |
2016.06.02 |
| 申请人 |
KONINKLIJKE PHILIPS NV;PHILIPS LUMILEDS LIGHTNG CO LLC |
发明人 |
FREDERIC S DIANA;HENRY KWONG-HIN CHOY;MO QINGWEI;SERGE L RUDAZ;FRANK L WEI;DANIEL A STEIGERWALD |
| 分类号 |
H01L33/48;H01L33/44;H01L33/60 |
主分类号 |
H01L33/48 |
| 代理机构 |
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