| 摘要 |
PROBLEM TO BE SOLVED: To provide a silicon epitaxial wafer evaluation method capable of evaluating strength (motion of dislocation, etc.) of a wafer surface layer that is an epitaxial layer.SOLUTION: A method of evaluating a strength of a silicon epitaxial layer, includes: preparing silicon epitaxial wafers the silicon epitaxial layers of which have variable thicknesses, forming a depression on each silicon epitaxial layer; performing heat treatment and selective etching, measuring a length of dislocation, obtaining a relation between the length of the dislocation and the thickness of each silicon epitaxial layer, determining the smallest thickness of the silicon epitaxial layer for the constant length of the dislocation, preparing a silicon epitaxial wafer including a silicon epitaxial layer having a thickness larger than the determined smallest thickness and forming a depression on the silicon epitaxial layer, performing heat treatment and selective etching, actualizing dislocation, and thereby evaluating the strength of the silicon epitaxial layer. |
