CONTACT GEOMETRY HAVING A GATE SILICON LENGTH DECOUPLED FROM A TRANSISTOR LENGTH

摘要

A semiconductor device structure includes an active region positioned in a semiconductor substrate and a gate structure of a transistor positioned above the active region. The gate structure includes a gate insulating layer, a gate metal layer positioned above the gate insulating layer and a trimmed gate electrode material layer positioned above the gate metal layer. A length of at least a portion of the trimmed gate electrode material layer in a gate length direction of the transistor is less than a length of at least the gate metal layer in the gate length direction.

主权项

1. A semiconductor device structure, comprising:
an active region positioned in a semiconductor substrate; and a gate structure of a transistor positioned above said active region, said gate structure comprising:
a gate insulating layer;a gate metal layer positioned above said gate insulating layer; anda trimmed gate electrode material layer positioned above said gate metal layer, wherein a length of at least a portion of said trimmed gate electrode material layer in a gate length direction of said transistor is less than a length of at least said gate metal layer in said gate length direction.