SUSCEPTOR AND APPARATUS FOR MANUFACTURING EPITAXIAL WAFER

摘要

PROBLEM TO BE SOLVED: To provide a susceptor which allows suppressing a variation in a thickness of an epitaxial film in an outer circumference of the surface of a substrate wafer and to provide an apparatus for manufacturing an epitaxial wafer. SOLUTION: The susceptor 2 includes: a substantially circular-disk-like wafer mounting section 21 having an outer shape larger than a substrate wafer W; and a substantially annular-plate-like circumferential section 22 having an inner circumferential surface 22A which stands up surrounding the circumference of the wafer mounting section 21 and also a top surface 22B formed extending outwards from the top end of the inner circumferential surface 22A along the mounting surface 21A of the wafer mounting section 21. A vapor growth controller section 23 is provided formed of SiO2which provides a restrained reaction with a reaction gas as compared to an SiC film, while having an inner circumferential surface 23A modeled after the inner circumferential surface 22A of the circumferential section 22 and a top surface 23B modeled after the top surface 22B of the circumferential section 22. COPYRIGHT: (C)2007,JPO&INPIT