CRYSTALLINE LAYER STACK FOR FORMING CONDUCTIVE LAYERS IN A THREE-DIMENSIONAL MEMORY STRUCTURE

摘要

A stack of alternating layers comprising first epitaxial semiconductor layers and second epitaxial semiconductor layers is formed over a single crystalline substrate. The first and second epitaxial semiconductor layers are in epitaxial alignment with a crystal structure of the single crystalline substrate. The first epitaxial semiconductor layers include a first single crystalline semiconductor material, and the second epitaxial semiconductor layers include a second single crystalline semiconductor material that is different from the first single crystalline semiconductor material. A backside contact opening is formed through the stack, and backside cavities are formed by removing the first epitaxial semiconductor layers selective to the second epitaxial semiconductor layers. A stack of alternating layers including insulating layers and electrically conductive layers is formed. Each insulating layer contains a dielectric material portion deposited within a respective backside cavity. Each electrically conductive layer contains a material from a portion of a respective second epitaxial semiconductor layer.

主权项

1. A monolithic three-dimensional memory device, comprising:
a stack of layers comprising insulating layers and electrically conductive layers located over a substrate; and a memory stack structure extending through the stack and comprising, from outside to inside, a memory film and a vertical semiconductor channel, wherein each of the electrically conductive layers comprises at least one of a single crystalline doped semiconductor material portion and a single crystalline metal-semiconductor alloy portion.