VAPOR DEPOSITION OF METAL OXIDES, SILICATES AND PHOSPHATES, AND SILICON DIOXIDE

摘要

Metal silicates or phosphates are deposited on a heated substrate by the reaction of vapors of alkoxysilanols or alkylphosphates along with reactive metal amides, alkyls or alkoxides. For example, vapors of tris(tert-butoxy)silanol react with vapors of tetrakis(ethylmethylamido) hafnium to deposit hafnium silicate on surfaces heated to 300° C. The product film has a very uniform stoichiometry throughout the reactor. Similarly, vapors of diisopropylphosphate react with vapors of lithium bis(ethyldimethylsilyl)amide to deposit lithium phosphate films on substrates heated to 250° C. Supplying the vapors in alternating pulses produces these same compositions with a very uniform distribution of thickness and excellent step coverage.

主权项

1. A process for making an insulating metal oxide layer in a microelectronic device, the process comprising:
alternatingly exposing a substrate to a first reactant vapor comprising a metal alkylamide, the metal alkylamide comprising a metal attached to two or more different ligands, at least one of which is an alkylamide, so as to form a deposited metal alkylamide; and a second reactant vapor, so as to form a metal oxide, wherein the deposition of the metal alkylamide and the second reactant are self-limiting, and wherein said metal oxide comprises oxygen and the metal from the metal alkylamide.