| 发明名称 |
Methods for Removing Particles from Etching Chamber |
| 摘要 |
A method includes forming a coating layer in a dry etching chamber, placing a wafer into the dry etching chamber, etching a metal-containing layer of the wafer, and moving the wafer out of the dry etching chamber. After the wafer is moved out of the dry etching chamber, the coating layer is removed. |
| 申请公布号 |
US2016268106(A1) |
申请公布日期 |
2016.09.15 |
| 申请号 |
US201615164509 |
申请日期 |
2016.05.25 |
| 申请人 |
Taiwan Semiconductor Manufacturing Company, Ltd. |
发明人 |
Lin Yu Chao;Chiu Yuan-Ming;Chang Ming-Ching;Tsai Hsin-Yi;Chen Chao-Cheng |
| 分类号 |
H01J37/32;H01L21/67;H01L21/3065 |
主分类号 |
H01J37/32 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A method comprising:
etching a wafer using an etching tool, wherein the etching tool comprises:
a wafer station, wherein the wafer is placed on the wafer station during the etching;a dry etching chamber, with the wafer station in the dry etching chamber; anda coating layer on an inner surface of the dry etching chamber, wherein the coating layer comprises a silicon-based oxide exposed to a vacant inner space of the dry etching chamber. |
| 地址 |
Hsin-Chu TW |
