| 发明名称 |
Wire structure and semiconductor device comprising the the wire structure |
| 摘要 |
Provided are a wire structure and a semiconductor device having the wire structure. The wire structure includes a first wire that has a first region having a width of several to tens of nanometers and a second region having a width wider than that of the first region.
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| 申请公布号 |
US2008169118(A1) |
申请公布日期 |
2008.07.17 |
| 申请号 |
US20070005364 |
申请日期 |
2007.12.27 |
| 申请人 |
SAMSUNG ELECTRONICS CO., LTD |
发明人 |
CHOI SANG-JUN;LEE JUNG-HYUN;BAE HYUNG-JIN;LEE CHANG-SOO |
| 分类号 |
H01L27/108;H01B5/00 |
主分类号 |
H01L27/108 |
| 代理机构 |
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代理人 |
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| 主权项 |
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