| 发明名称 |
SEMICONDUCTOR DEVICE INCLUDING FIN STRUCTURES AND MANUFACTURING METHOD THEREOF |
| 摘要 |
A method for manufacturing a semiconductor device includes forming a fin structure having a top surface and side surfaces. A mask layer is disposed over the top surface. A doping support layer is formed to cover part of the fin structure. A first impurity is introduced into a first region of the fin structure covered by the doping support layer, by implanting the first impurity into the doping support layer so that the implanted first impurity is introduced into the first region of the fin structure through the side surfaces. |
| 申请公布号 |
US2016218199(A1) |
申请公布日期 |
2016.07.28 |
| 申请号 |
US201514608147 |
申请日期 |
2015.01.28 |
| 申请人 |
Taiwan Semiconductor Manufacturing Co., Ltd. |
发明人 |
TSAI Chun Hsiung;WANG Tsan-Chun |
| 分类号 |
H01L29/66;H01L21/308;H01L21/02;H01L29/78;H01L21/225;H01L21/3115;H01L29/10;H01L29/16;H01L21/266;H01L21/324 |
主分类号 |
H01L29/66 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A method for manufacturing a semiconductor device, comprising:
forming a fin structure having a top surface and side surfaces, a mask layer being disposed over the top surface; forming a doping support layer to cover part of the fin structure; and introducing a first impurity into a first region of the fin structure covered by the doping support layer, by implanting the first impurity into the doping support layer so that the implanted first impurity is introduced into the first region of the fin structure through the side surfaces. |
| 地址 |
Hsinchu TW |
