| 摘要 |
Embodiments of the invention include a semiconductor structure including a light emitting layer disposed between an n-type region and a p-type region. A metal busbar is disposed on the semiconductor structure. A first portion of the metal busbar is in direct contact with the semiconductor structure. A reflector is disposed between a second portion of the metal busbar and the semiconductor structure. A current blocking structure prevents current from being injected in the light emitting layer in a region below the first portion. |
