| 发明名称 |
METHOD OF FORMING RESIST PATTERN |
| 摘要 |
A method of forming a resist pattern including forming a first resist pattern on a substrate; applying a cross-linking composition so as to cover the first resist pattern; heating the covered first resist pattern and crosslinking an isocyanate group in the cross-linking composition with the first resist pattern; and developing the covered first resist pattern, wherein the cross-linking composition includes a blocked isocyanate compound having a protected isocyanate group. |
| 申请公布号 |
US2016349617(A1) |
申请公布日期 |
2016.12.01 |
| 申请号 |
US201615158992 |
申请日期 |
2016.05.19 |
| 申请人 |
TOKYO OHKA KOGYO CO., LTD. |
发明人 |
HIRANO Tomoyuki;TSUCHIYA Junichi;MORI Takayoshi |
| 分类号 |
G03F7/16;G03F7/32 |
主分类号 |
G03F7/16 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A method of forming a resist pattern, comprising:
forming a first resist pattern on a substrate; applying a cross-linking composition so as to cover the first resist pattern; heating the covered first resist pattern and crosslinking an isocyanate group in the cross-linking composition with the first resist pattern; and developing the covered first resist pattern, wherein the cross-linking composition comprises a blocked isocyanate compound having a protected isocyanate group. |
| 地址 |
Kawasaki-shi JP |
