SILICON GERMANIUM-ON-INSULATOR FORMATION BY THERMAL MIXING

摘要

A layer of amorphous silicon is formed on a germanium-on-insulator substrate, or a layer of germanium is formed on a silicon-on-insulator substrate. An anneal is then performed which causes thermal mixing of silicon and germanium atoms within one of the aforementioned structures and subsequent formation of a silicon germanium-on-insulator material.

主权项

1. A method of forming a semiconductor structure, said method comprising:
forming an amorphous silicon layer portion on a surface of an active silicon germanium region of a silicon germanium-on-insulator material; forming a gate structure on a surface of said amorphous silicon layer portion; and forming an embedded SiGe channel region in said active SiGe region and directly beneath said gate structure utilizing a thermal mixing process in which silicon atoms from said amorphous silicon layer portion intermix with germanium atoms in said SiGe active region to form said embedded SiGe channel region.