| 发明名称 |
METHOD OF FORMING GUARD RING STRUCTURE |
| 摘要 |
A method of making a circuit device includes forming core circuitry. The core circuitry includes a doped region in the core circuit. The method further includes implanting a first set of guard rings around a periphery of the core circuitry. The first set of guard rings has a first dopant type. Implanting the first set of guard rings includes implanting the first set of guard rings spaced from the doped region. The method further includes implanting a second set of guard rings having a second dopant type, wherein the second dopant type being opposite to the first dopant type. At least one guard ring of the second set of guard rings is around a periphery of at least one guard ring of the first set of guard rings. |
| 申请公布号 |
US2016359000(A1) |
申请公布日期 |
2016.12.08 |
| 申请号 |
US201615242894 |
申请日期 |
2016.08.22 |
| 申请人 |
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. |
发明人 |
LIN Wan-Yen;LIN Wun-Jie;SU Yu-Ti;CHEN Bo-Ting;TSENG Jen-Chou;CHEN Kuo-Ji;CHANG Sun-Jay;LIANG Min-Chang |
| 分类号 |
H01L29/06;H01L27/02;H01L21/761;H01L21/265;H01L21/8234 |
主分类号 |
H01L29/06 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A method of making a circuit device, the method comprising:
forming core circuitry, wherein forming the core circuitry comprises forming a doped region in the core circuit; implanting a first set of guard rings around a periphery of the core circuitry, wherein the first set of guard rings has a first dopant type, and implanting the first set of guard rings comprises implanting the first set of guard rings spaced from the doped region; and implanting a second set of guard rings having a second dopant type, the second dopant type being opposite to the first dopant type, wherein at least one guard ring of the second set of guard rings is around a periphery of at least one guard ring of the first set of guard rings. |
| 地址 |
Hsinchu TW |
