发明名称 Power semiconductor module
摘要 A power semiconductor module having an increased reliability against thermal fatigue includes a power semiconductor element, a lower-side electrode connected to the lower side of the element, a first insulating substrate connected to the upper side of the lower-side electrode and having metallic foils bonded on both surfaces thereof, an upper-side electrode connected to the upper side of the power semiconductor element, a second insulating substrate connected to the upper side of the upper-side electrode and having metallic foils bonded on both surfaces thereof, a first heat spreader connected to the lower side of the first insulating substrate, and a second heat spreader connected to the upper side of the second insulating substrate. The power semiconductor element and the first and second insulating substrates are sealed with a resin.
申请公布号 US2007216013(A1) 申请公布日期 2007.09.20
申请号 US20070657458 申请日期 2007.01.25
申请人 FUNAKOSHI SUNAO;ISHIKAWA KATSUMI;SOGA TASAO 发明人 FUNAKOSHI SUNAO;ISHIKAWA KATSUMI;SOGA TASAO
分类号 H01L23/52 主分类号 H01L23/52
代理机构 代理人
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