发明名称 METHOD OF FORMING TUNGSTEN FILM
摘要 In a method of forming a tungsten film, an initial tungsten film and a main tungsten film are formed on an underlying film of a substrate. The initial tungsten film is formed on the underlying film by sequentially supplying a tungsten chloride gas and a reduction gas into a chamber while supplying a purging gas between the supplys of the tungsten chloride gas and the reduction gas, or by simultaneously supplying the tungsten chloride gas and the reduction gas. The main tungsten film is formed on the initial tungsten film by sequentially supplying the tungsten chloride gas and the reduction gas into the chamber while purging an inside of the chamber between the supplys of the tungsten chloride gas and the reduction gas. A supply amount of the tungsten chloride gas in forming the initial film is smaller than that in forming the main tungsten film.
申请公布号 US2016284553(A1) 申请公布日期 2016.09.29
申请号 US201615080281 申请日期 2016.03.24
申请人 Tokyo Electron Limited 发明人 SUZUKI Kenji;MAEKAWA Koji;HOTTA Takanobu
分类号 H01L21/285;H01L21/768 主分类号 H01L21/285
代理机构 代理人
主权项 1. A method of forming a tungsten film on a substrate having thereon an underlying film by using a tungsten chloride gas as a tungsten source gas and a reduction gas for reducing the tungsten chloride gas, the substrate being accommodated in a chamber maintained under a depressurized atmosphere, the method comprising: forming an initial tungsten film on the underlying film, by sequentially supplying the tungsten chloride gas and the reduction gas into the chamber while supplying a purging gas into the chamber between the supply of the tungsten chloride gas and the supply of the reduction gas, or by simultaneously supplying the tungsten chloride gas and the reduction gas into the chamber, and forming a main tungsten film on the initial tungsten film by sequentially supplying the tungsten chloride gas and the reduction gas into the chamber while purging an inside of the chamber between the supply of the tungsten chloride gas and the supply of the reduction gas, wherein a supply amount of the tungsten chloride gas supplied in the forming the initial film is smaller than a supply amount of the tungsten chloride gas supplied in the forming the main tungsten film.
地址 Tokyo JP