METHOD FOR MANUFACTURING AMOLED BACKPLANE

摘要

The present invention provides a method for manufacturing an AMOLED backplane, in which after a first metal layer is patternized to form a first gate terminal (61), a second gate terminal (63), and an electrode plate (65), with the patternized first metal layer as a shielding layer, a patternized polysilicon layer is subjected to N-type light doping; and then, an insulation layer (7) is deposited and the insulation layer (7) is subjected to non-isotropic etching to form spacers (71), and with patternized first metal layer and the spacers (71) as a shielding layer, the patternized polysilicon layer is subjected to N-type heavy doping to form light-doping drain areas (N−) exactly below the spacers (71) on the opposite sides of the first gate terminal (61), whereby light-doping drain areas (N−) on opposite sides of a channel area of a switching TFT are made symmetric to each other and the length of the light-doping drain areas (N−) is shorten; a conduction current is increased; a photoelectric current can be effectively reduced; one photo mask can be saved; and the cost can be lowered down.

主权项

1. A method for manufacturing an active matrix organic light-emitting diode (AMOLED) backplane, which sequentially deposits a buffer layer and an amorphous silicon layer on a substrate, crystalizes and converts the amorphous silicon layer into a polysilicon layer and patternizes the polysilicon layer, and after depositing a gate insulation layer, first applies a photoresist pattern formed with a photolithographic process as a shielding layer to subject the patternized polysilicon layer to P-type heavy doping; and then deposits and patternizes a first metal layer on the gate insulation layer to form a gate terminal and applies the patternized first metal layer as a shielding layer to subject the patternized polysilicon layer to N-type light doping; and then deposits an insulation layer and subjects the insulation layer to non-isotropic etching to form spacers, and then applies the patternized first metal layer and the spacers as a shielding layer to subject the patternized polysilicon layer to N-type heavy doping to form symmetric light-doping drain areas.