| 摘要 |
PROBLEM TO BE SOLVED: To provide a formation method of a seed layer capable of coping even with a request of lower temperature of a deposition process, while maintaining and enhancing the accuracy of surface roughness of a thin film formed on the seed layer, and capable of enhancing the in-plane uniformity furthermore.SOLUTION: A formation method of a seed layer includes a step (step 11) for forming a first seed layer by supplying amino silane gas onto a heated underlying surface, when forming a seed layer for forming a silicon film on the foundation, and a step (step 12) for forming a second seed layer by supplying silane gas of higher order than disilane onto the heated foundation surface. The treatment temperature in step 11 is set lower than 400°C and equal to or higher than the temperature capable of adsorbing at least silicon in the aminosilane-based gas, the treatment temperature in step 12 is set lower than 400°C and equal to or higher than the temperature capable of adsorbing at least silicon in the high order silane gas, and the processing pressure in steps 11, 12 exceeds 133.3 Pa and lower than 1333 Pa.SELECTED DRAWING: Figure 1 |
