发明名称 Integrated Semiconductor Device
摘要 A semiconductor device includes a first semiconductor device, a second semiconductor device, and a third semiconductor device. The first semiconductor device and the second semiconductor device are integrated to form a half-bridge. The third semiconductor device is a normally-off semiconductor device that is arranged in series with the half-bridge.
申请公布号 US2016293597(A1) 申请公布日期 2016.10.06
申请号 US201514679790 申请日期 2015.04.06
申请人 Infineon Technologies Austria AG 发明人 Curatola Gilberto;Kahlmann Frank
分类号 H01L27/088;H01L29/778 主分类号 H01L27/088
代理机构 代理人
主权项 1. An integrated semiconductor device comprising: a first semiconductor device; a second semiconductor device; and a third semiconductor device; wherein the first semiconductor device and the second semiconductor device are integrated to form a half-bridge; and wherein the third semiconductor device comprises a normally-off semiconductor device that is arranged in series with the half-bridge.
地址 Villach AT