HIGH TEMPERATURE CHEMICAL VAPOR DEPOSITION APPARATUS

摘要

Embodiments for an apparatus and method for depositing one or more layers onto a substrate or a freestanding shape inside a reaction chamber operating at a temperature of at least 7000C and 100 torr are provided. The apparatus is provided with means for defining a volume space in the reaction chamber for pre-reacting the reactant feeds forming at least a reaction precursor in a gaseous form, separated from a deposition zone for depositing a coating layer of uniform thickness on the substrate from the reacted precursor. In one embodiment, the means for defining the two different zones comprises a distribution medium. In another embodiment, the means comprises a plurality of reactant feed jets or injectors. In another embodiment, the apparatus is provided with a feeding system having injection means spatially spaced apart for tailoring the distribution of a plurality of gas-phase species, yielding a deposit that is substantially uniform in thickness and chemical composition along the substrate surface. In one embodiment, the apparatus further comprises a sacrificial substrate that further helps achieving thickness and chemical uniformity on the substrate.