| 摘要 |
PROBLEM TO BE SOLVED: To improve performance of a semiconductor device.SOLUTION: An off-set spacer OS1 formed in a memory cell MC1 is formed by a laminate film composed of a silicon oxide film OXF1 and a silicon nitride film SNF1, the silicon oxide film OXF1 being especially formed so as to be directly contact with a memory gate electrode MG's side wall and a charge storage film ECF's side surface end. On the other hand, an off-set spacer OS2 formed in a MISFET Q1 is formed by a silicon nitride film SNF1. Especially in the MISFET Q1, the silicon nitride film SNF1 is directly contact with a gate electrode G1's side wall and a high dielectric constant film HK's side surface end.SELECTED DRAWING: Figure 2 |
