发明名称 |
METHOD OF LASER SCRIBING OF SEMICONDUCTOR WORKPIECE USING DIVIDED LASER BEAMS |
摘要 |
This invention provides an effective and rapid method of laser processing for separating semiconductor devices formed on hard and solid substrates (6) with a one pass process. The method is based on generating fractures along the scribing trajectory which extend deep into the bulk of a workpiece (6), wherein thermal stress is induced by delivering at least two processing (ultra short pulse) pulsed-beams (7), containing at least primary and secondary pulses. Primary pulses are used to generate a heat accumulated zone, which allows for more efficient absorption of the secondary pulses, which generate a sufficient heat gradient to produce mechanical failures, necessary for mechanically separating the workpiece (6) into separate pieces. |
申请公布号 |
WO2016193786(A1) |
申请公布日期 |
2016.12.08 |
申请号 |
WO2015IB54143 |
申请日期 |
2015.06.01 |
申请人 |
EVANA TECHNOLOGIES, UAB |
发明人 |
VANAGAS, Egidijus;KIMBARAS, Dziugas;VESELIS, Laurynas |
分类号 |
B23K26/067;B23K26/0622;B23K26/364;B23K101/40;B23K103/16 |
主分类号 |
B23K26/067 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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