Methods of Forming Trench Isolation and Methods of Forming Floating Gate Transistors

摘要

A method of forming trench isolation includes etching first trench lines into semiconductive material of a semiconductor substrate. First isolation material is formed within the first trench lines within the semiconductive material. After forming the first isolation material within the first trench lines, second trench lines are etched into semiconductive material of the substrate between the first trench lines such that the first trench lines and second trench lines alternate. Second isolation material is formed within the second trench lines within the semiconductive material. Alternate and additional aspects are contemplated.