METHOD AND SYSTEM FOR INSPECTING INDIRECT BANDGAP SEMICONDUCTOR STRUCTURE

摘要

METHODS (600) AND SYSTEMS (100) FOR INSPECTING AN INDIRECT BANDGAP SEMICONDUCTOR STRUCTURE (140) ARE DESCRIBED. A LIGHT SOURCE (110) GENERATES LIGHT (612) SUITABLE FOR INDUCING PHOTOLUMINESCENCE IN THE INDIRECT BANDGAP SEMICONDUCTOR STRUCTURE (140). A SHORT-PASS FILTER UNIT (114) REDUCES LONG-WAVELENGTH LIGHT OF THE GENERATED LIGHT ABOVE A SPECIFIED EMISSION PEAK. A COLLIMATOR (112) COLLIMATES (616) THE LIGHT. A LARGE AREA OF THE INDIRECT BANDGAP SEMICONDUCTOR STRUCTURE (140) IS SUBSTANTIALLY UNIFORMLY AND SIMULTANEOUSLY ILLUMINATED (618) WITH THE COLLIMATED, SHORT-PASS FILTERED LIGHT. AN IMAGE CAPTURE DEVICE (130) CAPTURES (620) IMAGES OF PHOTOLUMINESCENCE SIMULTANEOUSLY INDUCED BY THE SUBSTANTIALLY UNIFORM, SIMULTANEOUS ILLUMINATION INCIDENT ACROSS THE LARGE AREA OF THE INDIRECT BANDGAP SEMICONDUCTOR STRUCTURE. THE PHOTOLUMINESCENCE IMAGES ARE IMAGE PROCESSED (622) TO QUANTIFY SPATIALLY RESOLVED SPECIFIED ELECTRONIC PROPERTIES OF THE INDIRECT BANDGAP SEMICONDUCTOR STRUCTURE (140) USING THE SPATIAL VARIATION OF THE PHOTOLUMINESCENCE INDUCED IN THE LARGE AREA. THE MOST ILLUSTRATIVE DRAWING ACCOMPANYING THE ABSTRACT: