发明名称 |
Vapour deposition of tungsten - control of fluorine content of tungsten vapours |
摘要 |
<p>Vapour deposited tungsten coatings, which for optimum quality and performance must contain only 5-25 ppm F2 are produced by controlling the amount of free F2 in the conventional vapour depositing gas mixt. of H2 and tungsten hexafluoride by addition of a small amount of inert carrier gas e.g. Helium saturated with water vapour by passage through a water bath. Tungsten deposites free from blisters or grain growth are produced.</p> |
申请公布号 |
DE2314087(A1) |
申请公布日期 |
1973.09.27 |
申请号 |
DE19732314087 |
申请日期 |
1973.03.21 |
申请人 |
U.S.ATOMIE ENERGY COMMISSION |
发明人 |
CHIN,JACK;BASTER HORSLEY JUN.,JERE;WALTER MESSICK,CHARLES |
分类号 |
C23C16/14;(IPC1-7):C23C11/02 |
主分类号 |
C23C16/14 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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