发明名称 Vapour deposition of tungsten - control of fluorine content of tungsten vapours
摘要 <p>Vapour deposited tungsten coatings, which for optimum quality and performance must contain only 5-25 ppm F2 are produced by controlling the amount of free F2 in the conventional vapour depositing gas mixt. of H2 and tungsten hexafluoride by addition of a small amount of inert carrier gas e.g. Helium saturated with water vapour by passage through a water bath. Tungsten deposites free from blisters or grain growth are produced.</p>
申请公布号 DE2314087(A1) 申请公布日期 1973.09.27
申请号 DE19732314087 申请日期 1973.03.21
申请人 U.S.ATOMIE ENERGY COMMISSION 发明人 CHIN,JACK;BASTER HORSLEY JUN.,JERE;WALTER MESSICK,CHARLES
分类号 C23C16/14;(IPC1-7):C23C11/02 主分类号 C23C16/14
代理机构 代理人
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