首页
产品
黄页
商标
征信
会员服务
注册
登录
全部
|
企业名
|
法人/股东/高管
|
品牌/产品
|
地址
|
经营范围
发明名称
PROCESS FOR PRODUCING SILICON CARBIDE
摘要
申请公布号
JPS5220399(A)
申请公布日期
1977.02.16
申请号
JP19750097101
申请日期
1975.08.09
申请人
IBIGAWA ELECTRIC IND CO LTD
发明人
YOKOYAMA TAKAO;ENOMOTO AKIRA;YOSHIOKA MICHIHIRO
分类号
C01B31/36
主分类号
C01B31/36
代理机构
代理人
主权项
地址
您可能感兴趣的专利
Group III nitride semiconductor device and method for manufacturing the same
Manufacturing method of semiconductor device and semiconductor device
Display device with transistor sampling for improved performance
Imaging device and imaging system
Semiconductor integrated circuit device
Semiconductor device
Method for manufacturing light-emitting display device
Three dimensional semiconductor memory devices and methods of fabricating the same
Semiconductor device
Semiconductor device having an ESD protection circuit
Semiconductor device having inductor
Chip-on-wafer bonding method and bonding device, and structure comprising chip and wafer
Methods of fabricating semiconductor chip solder structures
Semiconductor device and method of forming wafer level die integration
Semiconductor package with corner pins
Power module package
Method for capping copper interconnect lines
Hard mask removal scheme
Picture encoding and decoding
Multiple thread video encoding using HRD information sharing and bit allocation waiting
