Junction type field effect transistor with source at oxide-gate interface depth to maximize mu

摘要

A junction type field effect transistor comprises a semiconductor layer of one conductivity type acting as a drain region, a source region of said one conductivity type formed to a prescribed depth from the surface of the semiconductor layer, an insulation layer formed to a prescribed depth from the surface of the semiconductor layer to surround the source region, and a gate region of the opposite conductivity type formed in the proximity of the sorce region. The insulation layer and source region are formed to substantially the same depth.