| 摘要 |
PURPOSE:To facilitate electric wiring between elements, by forming the wiring on an amorphous epitaxial layer, which is formed at the part directly on a thin insulating film, thereby reducing stepped parts. CONSTITUTION:On a part of a semiinsulating substrate 1, a stripe shaped insulating film 21 is formed. A buffer layer 31, an active layer 32 for laser, a clad layer 33, and a nondoped layer 34 as an FET active layer are laminated by a liquid phase epitaxial method. Thereafter, the surface is coated by SiO2 35, the SiO2 35 at a laser part is etched, and a window is provided. Then, a thermally diffused layer of Zn 36 is formed. Thereafter, electrodes 6 and 6' for the laser are formed, and a window is provided in a source part of the FET and the SiO2 35 of a drain part. A source electrode 10, a drain electrode 8, and a gate electrode 9 are formed on an amorphous epitaxial layer 37. Thus, a semiconductor integrated circuit, wherein the laser and the FET are formed into a unitary body, is obtained. |
