| 摘要 |
PURPOSE:To obtain a semiconductor device which is excellent in moisture resistance and does not give abnormality to wiring patterns by forming a Si oxide film and a Si nitride film successively on a metallic wiring pattern. CONSTITUTION:The Si oxide film 20 which is more difficult to cause corrosion than a PSG film is formed, as the first passivation film, on the surface of a wafer 12 whereon the metallic wiring pattern 15 is formed. This oxide film 20 protects the wiring pattern 15 from successive processes of forming a Si nitride film. Next, the second passivation film 22 of a Si nitride film 21 excellent in moisture resistance is formed on this Si oxide film 20. Such a constitution enables to obtain a semiconductor device having a stable passivation film which is excellent in moisture resistance and does not give abnormality to the metallic wiring patterns of aluminum metals. |
