| 摘要 |
PURPOSE:To repair the Si dioxide in the periphery of an electrode damaged by processing without substantially oxidizing a high melting point metallic film by a method wherein a substrate having an Si film and a high melting point metallic film is heat-treated in the mixed gas of carbon monoxide and carbon dioxide. CONSTITUTION:When W vapor-deposited by sputtering method is processed as shown in Fig. 1 and then N<+>-layers 3' are formed by ion implantation, in order to form an MOSFET using W(or Mo) for the gate electrode 4, the SiO21 in the periphery of the electrode is damaged. Next, the part damaged is repaired as shown in Fig. 2 on heat treatment of 1,000 deg.CX30mm. in the atmosphere of the composition of CO2/CO=0.01. |
