发明名称 |
ISFET sensor and method of manufacture |
摘要 |
There is provided an ISFET structure and a method for manufacturing that structure such that external electrical contact to the P+ source and drain regions is made through individual holes etched from the back to the source and drain regions with sidewall isolation being provided in the holes and metallization covering the surface of said sidewalls and extending to contact pads on the back of the ISFET.
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申请公布号 |
US4505799(A) |
申请公布日期 |
1985.03.19 |
申请号 |
US19840631507 |
申请日期 |
1984.07.16 |
申请人 |
GENERAL SIGNAL CORPORATION |
发明人 |
BAXTER, RONALD D. |
分类号 |
G01N27/414;H01L21/768;H01L23/48;H01L29/417;(IPC1-7):H01L21/60;G01N27/30 |
主分类号 |
G01N27/414 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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