| 摘要 |
PURPOSE:To contrive the reduction in ON resistance by a method wherein an impurity is diffused to an Si substrate in the drain electrode side and a drain electrode is then formed on the surface thereof. CONSTITUTION:A P type Si layer 2 and an N type Si layer 3 are formed on the N type Si substrate 1, and an Si oxide film 4 is formed on the layer 3. Next, a V-groove reaching the substrate 1 is formed by opening the film 4. Then, the oxide film 4 is grown in the V-groove part, and successively each polycrystalline film 5 is grown. At this time, the films 4 and 5 grow also on the surface opposite to the V-groove. The films 4 and 5 on the back of the substrate are removed. Phosphorus is introduced to the film 5 and the back of the substrate 1 as the impurity. Thereby, a polycrystalline Si film 6 having a seat resistance of several OMEGA and an N type diffused layer 9 of high concentration are formed. The film 6 in the part other than the V-groove is removed, and the film 4 is opened at the source terminal lead-out part. Source electrodes 7 are formed and the drain electrode 8 is formed on the layer 9, and a gate N-channel MOSFET is formed by the V-groove shape S. This manner enables the reduction in ON resistance because of easy formation of the ohmic contact of the electrode 8. |
