| 摘要 |
PURPOSE:To render thermal destruction difficult to occur at an end face and thereby to realize high output by a method wherein the liquid phase crystal growth method is employed to realize an activation layer thinner in the vicinity of the end face and provided with a larger band gap. CONSTITUTION:On a substrate 1a, a lower clad layer 2a, activation layer 3a, uppsr clad layer 4a, contact layer 5 are grown by the liquid phase growth method, in said order. In the vicinity of the light-emitting end face, the band gap of the activation layer 3a grown on a ridge 8 is larger than that of an activation layer 3al located within the chip. It hollows that the end face is transparent to the light generated within the chip and does not absorb the light. It is difficult for the end surface to be damaged due to high temperatures attributable to absorbed light. Near the end face, where the activation layer 3a is thin, light oozes out to arrive at the clad layers 2a, 4a, lowering optically energy density. With the window and the light-emitting portion growing simultaneously, they are less prone to have faults and are easier to manufacture, leading to a high energy laser.
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