| 摘要 |
PURPOSE:To form a low noise amplifier circuit having less noise figure by using a conventional thin film circuit substrate to an output circuit side and using a specific thin film circuit substrate for an input circuit side. CONSTITUTION:The low noise amplifier circuit is provided with an FET1, the input side circuit substrate 22 and the output side circuit substrate 23. The conventional thin film circuit substrate is used for the output side circuit substrate 23 because it is used for gain matching. On the other hand, the thin film circuit substrate where a copper film 31 and a gold film 32 are coated to the substrate of aluminum 30 is used for the input side circuit substrate 22 and a conductor film patter 25 is formed. Since a resistor film pattern 6 is not formed in using the input side circuit substrate 22 in this way, the pattern 6 is provided to the output side circuit substrate 32. Since the circuit substrate 22 has a high Q0 characteristic, the noise figure is decreased remarkably. Thus, the low noise amplifier circuit with less noise figure is formed.
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