| 摘要 |
PURPOSE:The elements for forming a single crystal thin film are fed onto the single crystal base in high vacuum so that the growth rate differs between in the start and in the growing period to give a single crystal thin film with reduced defectd in lamination. CONSTITUTION:Elements for single crystal thin film such as Si, Ge are fed in their atomic or molecular state on to the single crystal base in high vacuum to form several or a few hundred atomic layers at a speed of less then 1Angstrom /s. Then, the elements are fed at a rate over 5Angstrom /s. Thus, even in case of a silicon base of (111) crystal orientation is used, the resultant epitaxial thin film as a lamination defect density of 1-2X10<2>cm<-1>. |
