发明名称 |
SPUTTERING DEVICE |
摘要 |
PURPOSE:To form a sputtered film having always an optimum film thickness distribution without decreasing the speed of sputtering in a magnetron type sputtering device in which an electric field and magnetic field are intersected orthogonally by placing a magnet to the outside of a vacuum vessel and making adjustable the eccentric distance relative to the central axis of a target. CONSTITUTION:The Co-Cr alloy target 1 is fixed atop a copper supporting table 6 attached to the inside of the vacuum vessel 5. The space between the base 6 and the vessel 5 is cooled with water to cool the target 1. A motor 7 which has a revolving shaft 8 on the central axis of the target 1 and is attached with the end of a plate 10 for attaching the magnet 2 provided with an elliptical attaching hole 9 is disposed on the outside of the vessel 5. The eccentric distance D between the center of the magnet 2 and the center of the target 1 can be freely adjusted by attaching the magnet 2 to the hanged position of the hole 9. The Co-Cr alloy film having the desired film thickness distribution is thus formed on the surface of a material to be treated without decreasing the speed of sputtering. |
申请公布号 |
JPS6199673(A) |
申请公布日期 |
1986.05.17 |
申请号 |
JP19840215779 |
申请日期 |
1984.10.15 |
申请人 |
TOKUDA SEISAKUSHO LTD;TOSHIBA CORP |
发明人 |
SATOYAMA SHOZO;NISHIKAWA REIJI |
分类号 |
C23C14/36;C23C14/35;C23C14/54;H01J37/34 |
主分类号 |
C23C14/36 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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