| 摘要 |
PURPOSE:To enable reaction at <=500 deg.C by introducing an org. silane and >=one kind of reaction gas into a reaction vessel and irradiating the surface of a material to be treated in the reaction vessel with ultraviolet rays while maintaining the reaction temp. at <=500 deg.C. CONSTITUTION:An org. silane is introduced into a reaction vessel 10 together with at least one kind of reaction gas among N2O, NO2, NO, CO2, CO, and NH3. Then, the reaction temp. is held at <=500 deg.C, and the surface of the material 14 to be treated placed in the reaction vessel 10 is irradiated with ultraviolet rays to photo-excite the reaction gas to cause reaction and SiO2 film, Si3N4 film, or SixOyNz film is formed on the surface of the material 14 to be treated. For example, a wafer 14 is placed on a susceptor 12 in the reaction vessel 10, and the susceptor is heated with a heater 16 so that the surface of the susceptor 12 reaches the reaction temp. of the reaction gas. The ultraviolet rays are generated from an Hg lamp 18 to irradiated the surface of the wafer 14. |
