发明名称 POLISHING METHOD FOR WAFER
摘要 PURPOSE:To polish a wafer into mirror-finishing, by setting up the wafer and an abrasive plate provided with a window transmitting light so as to be opposed via a chemical solution, while making the wafer and the abrasive plate perform their relative motion via the chemical solution while irradiating the light to the chemical solution and the wafer through the said window. CONSTITUTION:A wafer 2 is pressed to an abrasive plate 5 with a pressure of about 10g/cm<2>, and the wafer 2 and the abrasive plate 5 are rotated in an arrow direction via a chemical solution 8 kept in a tank 6 while irradiating ultraviolet rays 9 on a polishing surface of the wafer 2 through each window 4 of the abrasive plate. with this operation, the wafer 2 and the abrasive plate 5 start their relative motion, thus the wafer is polished. With irradiation of the ultraviolet rays 9, the wafer and/or the chemical solution 8 come into a state of being excited and activated, therefore they are easy to react so that a reaction velocity goes up and, what is more, a surface of the water 2 is subjected to friction, thus the surface is mechanically processed so smooth enough, making a removal rate increasable while polishing the wafer into mirror-finishing.
申请公布号 JPS61270060(A) 申请公布日期 1986.11.29
申请号 JP19850112275 申请日期 1985.05.27
申请人 NEC CORP 发明人 HAMAGUCHI TSUNEO;EGAMI KOJI
分类号 B24B7/22;H01L21/304 主分类号 B24B7/22
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