| 摘要 |
PURPOSE:To improve the heat resistance high speed operation characteristics by using a silicon carbide (SiC) as a base material, forming an emitter and a collector of silicon, and forming a E-B, B-C junctions in the SiC film to form an extrafine base region. CONSTITUTION:Phosphorus ions are implanted into a silicon substrate 11, SiC is then hetero-epitaxially grown on the substrate 11, a polysilicon film is grown thereon, boron ions are implanted through the polysilicon film, annealed, the polysilicon film is washed out, the polysilicon film 13 is again grown, phosphorus ions are implanted into the film, and annealed to form an emitter. The SiC does not substantially pass an impurity at diffusing temperature (600-1,200 deg.C) used for Si. A thin base is formed of the SiC film, and doped to form an emitter, but even if a heat treatment is achieved to form the emitter, impurities in the emitter and the collector hardly diffused each other, and sharp collector/ base/emitter structure is obtained.
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