| 摘要 |
PURPOSE:To prevent the generation of a source noise even when operating plural high drive output buffers by connecting at least two of plural gate electrodes of a MOS transistor comprising plural gate electrodes in series. CONSTITUTION:A source 1 and a drain 2 are located on both sides of a polysilicon gate 3 and an A wiring 4 connects the polysilicon gates through contacts 5. When a signal enters in the A wiring 4 (H), the polysilicon gate 3 (A) operates at first and next the polysilicon gate 3 (B) operates a constant time later by an influence of a resistance component of the polysilicon gate 3. Thus, the polysilicon gates 3 (C)-(F) in turn and the 7th polysilicon gate 3 (G) operates lastly.
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