| 摘要 |
PURPOSE:To obtain the title uniform and dense diamond film by separating the production process into a nucleus forming stage and a film forming stage, and making the ratio of a carbon-contg. gas to gaseous H2 in the nucleus forming stage higher than that in the film forming stage. CONSTITUTION:An inert gas such as Ar is introduced onto the surface of a substrate heated at 500-1,300 deg.C to generate plasma, and the surface is cleaned. A mixture of a carbon-contg. gas (e.g., CH4) and gaseous H2 is introduced, and the ratio of the carbon-contg. gas to the gaseous H2 is controlled to a value 0.02-0.1 higher than 0.005-0.5 which is the mixing ratio in the succeeding film forming stage. Consequently, nuclei are formed on the substrate in high density. The gaseous mixture contg. the 0.005-0.5 ratio of the carbon-contg. gas to gaseous H2 is then supplied, and diamond is grown from the nuclei.
|
