| 摘要 |
PURPOSE:To omit one each of pattern masks by a method wherein, in case of forming a gate signal input terminal, a metallic layer is also formed on a drain signal input terminal. CONSTITUTION:A metallic layer 10 is formed on a drain signal input terminal 3 on a glass substrate 1 made of a transparent electrode material. Next, a passivation layer 9 is deposited on a TFT substrate to be coated with a negaresist 11. In such a state, the negaresist 11 is exposed by irradiationg to light from the rear surface of substrate 1. At this time, both the glass substrate 1 and the passivation layer 9 made of silicon nitride are transparent likewise an island part b is also transparent due to the thin total thickness of n<+> type amorphous silicon and amorphous silicon so that the light c may be shielded only by metallic gate lines 7, gate signal input terminals 8 and the metallic layer 10 on the drain signal input terminal 3 leaving the other parts to be exposed. Finally, the silicon nitride layer is etched and the negaresist 11 is peeled off to remove the passivation layer 9 on both signal input terminals.
|
